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tfa3x series features and benefits? exceptional reliability ? small fully-molded sip package with heatsink mounting for high thermal dissipation and long life ? operating junction temperature to 150c ? v drm of 700 or 800 v ? 4.7 a rms on-state current ? 7 ma typical gate trigger current ? uniform switching ? ul recognized component (file no.: e118037) (suffix i) reverse blocking triode thyristor package: 3-pin sip (to-220f) not to scale applications? motor control for small tools ? temperature control, light dimmers, electric blankets ? general use switching mode power supplies (smps) descriptionthis sanken reverse blocking triode thyristor is designed for ac power control, providing reliable, uniform switching for half-cycle ac applications. in comparison with other products on the market, the tfa3x series provides increased isolation voltage (1800 vac rms ), guaranteed for up to 1 minute. in addition, commutation dv/dt is improved. typical applications m single-phase motor control (for example, electric tool) in-rush current control (for example, smps) 28105.01, rev. 1 downloaded from: http:///
reverse blocking triode thyristor tfa3x series 2 selection guide part number v drm (v) ul-recognized component package packing tfa37(i) 700 yes 3-pin fully molded sip with heatsink mount 50 pieces per tube TFA37S 700 C tfa38(i) 800 yes tfa38s 800 C absolute maximum ratings characteristic symbol notes rating units peak repetitive off-state voltage v drm tfa37x t j = C40c to 150c, r gref = 1 k 700 v tfa38x 800 v isolation voltage v iso ac rms applied for 1 minute between lead and case 1800 v average on-state current i t(av) 50 hz half cycle sine wave, conduction angle ( ) = 180, continuous operation, t c = 127c 3.0 a rms on-state current i t(rms) 4.7 a surge on-state current i tsm f = 60 hz half cycle sine wave, single, non-repetitive 66 a f = 50 hz 60 a i 2 t value for fusing i 2 t value for 50 hz half cycle sine wave, 1 cycle, i tsm = 60 a 18 a 2 s critical rising rate of on-state current di/dt i t = i t(rms) , v d = v drm 0.5, f 60 hz, t gw 10 s, t gr 250 ns, i gp 30 ma (refer to gate trigger circuit diagram) 50 a/ s peak forward gate current i fgm f 50 hz, duty cycle 10% 2.0 a peak forward gate voltage v fgm f 50 hz, duty cycle 10% 10 v peak reverse gate current v rgm f 50 hz 5.0 v peak gate power dissipation p gm f 50 hz, duty cycle 10% 5.0 w average gate power dissipation p gm(av) t j < t j (max) 0.5 w junction temperature t j C40 to 150 oc storage temperature t stg C40 to 150 oc k a g terminal list table number name function 1k cathode terminal 2 a anode terminal 3 g gate control pin-out diagram thermal characteristics may require derating at maximum conditions characteristic symbol test conditions value units package thermal resistance (junction to case) r jc for ac 4.1 oc/w all performance characteristics given are typical values for circuit or system baseline design only and are at the nominal operating voltage and an ambient temperature, t a , of 25c, unless oth er wise stated. 123 allegro microsystems, inc. 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com downloaded from: http:///
reverse blocking triode thyristor tfa3x series 3 electrical characteristics characteristics symbol test conditions min. typ. max. unit off-state leakage current i drm v d = v drm , t j = 150c, r gref = 1 k C C 2.0 ma reverse leakage current i rrm v d = v drm , t j = 150c, r gref = 1 k C C 2.0 ma on-state voltage v tm i tm = 10 a, t c = 25c C C 1.5 v gate trigger voltage v gt v d = 6 v, r l = 10 , t c = 25c C C 1.0 v gate trigger current i gt v d = 6 v, r l = 10 , t c = 25c C 7 15 ma gate non-trigger voltage v gd v d = v drm 0.5, r gref = 1 k , t j = 125c 0.2 C C v holding current i h r gref = 1 k , t j = 25c C 15 C ma critical rising rate of off-state voltage dv/dt v d = v drm 0.5, t j = 125c, r gref = 1 k , c gref = 0.033 f C 300 C v/ s test circuit 1 voltage-current characteristic gate trigger current r gref c gref g k a t gr t gw i gp i f i r v r v f v drm v rrm i rrm i drm v tm v tm (on state) (off state) i tm i h allegro microsystems, inc. 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com downloaded from: http:///
reverse blocking triode thyristor tfa3x series 4 = conduction angle supply vac on-state currrent v gate v g i t commutation timing diagrams allegro microsystems, inc. 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com downloaded from: http:///
reverse blocking triode thyristor tfa3x series 5 performance characteristics at t a = 25c 0 1 10 100 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 v t (max) (v) i t (max) (a) 200180 160 140 120 100 8060 40 20 0 65 4 3 2 1 0 100 9080 70 60 50 40 30 20 10 0 21 0 1 10 100 i tsm (a) 0123 5 4 012345 C60 C20 20 60 100 140 0.1 1 100 10 maximum on-statecurrent versus maximum on-state voltage gate voltage versus gate current surge on-statecurrent versus quantity of cycles maximum allowablecase temperature versus average on-state current maximum averagepower dissipation versus average on-state current typical gatetrigger voltage versus junction temperature at v d = 6 v and r l = 10 t j = 150c half cycle sine waveinitial t j = 125c ? = 10 ms, f = 20 ms half cycle sine wave half cycle sine wave t j = 25c p t(av) (w) i t(av) (a) v g (v) i g (ma) quantity of cycles t c (c) v gt ( v) typical gatetrigger current versus junction temperature at v d = 6 v and r l = 10 i gt (ma) typicalholding current versus junction temperature at r gref = 10 k i h (ma) t j (c) C60 C20 20 60 100 140 t j (c) 0.1 1 100 10 C60 C20 20 60 100 140 t j (c) r gref = 10 k = 30 = 60 = 120 = 180 = 90 i t(av) (a) = 30 = 60 = 120 = 180 = 90 0.1 1 100 10 10 100 1000 10 000 v gm = 10 v v gt (C40c) = 1.5 v v gt (25c) = 1 v v gd = 0.2 v i gm = 2 a i gt (C40c) = 30 ma i gt (25c) = 15 ma p gm = 5 w p g(av) = 0.5 w allegro microsystems, inc. 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com downloaded from: http:///
reverse blocking triode thyristor tfa3x series 6 1 0.1 10 1 10 100 1000 10 000 100 000 z jc (c/w) transient thermal impedence versus voltage pulse duration for ac t (ms) allegro microsystems, inc. 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com downloaded from: http:///
reverse blocking triode thyristor tfa3x series 7 leadframe plating pb-free. device meets rohs requirements. 10.0 0.2 ?3.3 0.2 1.35 0.15 2.2 0.2 1.35 0.15 4.2 0.22.8 0.2 0.5 0.1 45 2.6 0.1 terminal dimension at lead tips 0.85 +0.2C0.1 0.45 +0.2C0.1 4.0 +0.2C0.3 16.9 0.3 8.4 0.2 3.9 0.2 (13.5) 0.8 0.2 brandingarea xxxxxxxx xxxxx gate burr: 0.3 mm (max.), mold flash may appear at opposite sideterminal core material: cu terminal treatment: ni plating and pb-free solder dip leadform: 600 package: to-220f (fm20) dimensions in millimeters branding codes (exact appearance at manufacturer discretion):1st line, type: tfa3xx 2nd line, lot: ym where: y is the last digit of the year of manufacture m is the month ( 1 to 9, o, n, d ) 12 3 2.54 0.1 view a view b deflection at pin bend 0.7 max 0.7 max view a deflection at pin bend 0.7 max 0.7 max view b to-220f package outline drawing allegro microsystems, inc. 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com downloaded from: http:///
reverse blocking triode thyristor tfa3x series 8 50 pieces per tube25 tubes per layer 3 layers per carton 3750 pieces per outer carton dimensions in mm 540 110 172 530 7 35 packing specification tube packing allegro microsystems, inc. 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com downloaded from: http:///
reverse blocking triode thyristor tfa3x series 9 200 pieces per tray5 trays per inner carton 4 inner cartons per outer carton 4000 pieces maximum per outer carton dimensions in millimeters 430 165 175 405 36 123 bulk packing allegro microsystems, inc. 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com downloaded from: http:///
reverse blocking triode thyristor tfa3x series 10 warning these devices are designed to be operated at lethal voltages and energy levels. circuit designs that embody these components must conform with applicable safety requirements. pre cau tions must be taken to prevent accidental contact with power-line potentials. do not connect ground ed test equipment. the use of an isolation transformer is recommended during circuit development and breadboarding. because reliability can be affected adversely by improper storage environments and handling methods, please observe the following cautions. cautions for storage ensure that storage conditions comply with the standard temperature (5c to 35c) and the standard relative humidity (around 40 to 75%); avoid storage locations that experience extreme changes in temperature or humidity. avoid locations where dust or harmful gases are present and avoid direct sunlight. reinspect for rust on leads and solderability of products that have been stored for a long time. cautions for testing and handling when tests are carried out during inspection testing and other standard test periods, protect the products from power surges from the testing device, shorts between adjacent products, and shorts to the heatsink. remarks about using silicone grease with a heatsink when silicone grease is used in mounting this product on a heatsink, it shall be applied evenly and thinly. if more silicone grease than required is applied, it may produce stress. coat the back surface of the product and both surfaces of the insulating plate to improve heat transfer between the product and the heatsink. volatile-type silicone greases may permeate the product and produce cracks after long periods of time, resulting in reduced heat radiation effect, and possibly shortening the lifetime of the product. our recommended silicone greases for heat radiation purposes, which will not cause any adverse effect on the product life, are indicated below: type suppliers g746 shin-etsu chemical co., ltd. yg6260 momentive performance materials sc102 dow corning toray silicone co., ltd. heatsink mounting method torque when tightening mounting screws. thermal resistance increases when tightening torque is low, and radiation effects are decreased. when the torque is too high, the screw can strip, the heatsink can be deformed, and distortion can arise in the product frame. to avoid these problems, observe the recommended tightening torques for this product package type 0.490 to 0.686 nm (5 to 7 kgfcm). for effective heat transfer, the contact area between the product and the heatsink should be free from burrs and metal fragments, and the heatsink should be flat and large enough to contact over the entire side of the product, including mounting flange and exposed thermal pad. the mounting hole in customer-supplied heatsink must be less than ?4 mm; this includes the diameter of any dimple around punched holes. this is to prevent possible deflection and cracking of the product case when fastened to the heatsink. soldering when soldering the products, please be sure to minimize the working time, within the following limits: 2605c 10 s 3505c 3 s soldering iron should be at a distance of at least 1.5 mm from the body of the products electrostatic discharge when handling the products, operator must be grounded. grounded wrist straps worn should have at least 1 m of resistance to ground to prevent shock hazard. workbenches where the products are handled should be grounded and be provided with conductive table and floor mats. when using measuring equipment such as a curve tracer, the equipment should be grounded. when soldering the products, the head of soldering irons or the solder bath must be grounded in other to prevent leak voltages generated by them from being applied to the products. the products should always be stored and transported in our shipping containers or conductive containers, or be wrapped in aluminum foil. m3 screw device heatsink flat washer split washer m3 nut allegro microsystems, inc. 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com downloaded from: http:///
reverse blocking triode thyristor tfa3x series 11 the products described herein are manufactured in ja pan by sanken electric co., ltd. for sale by allegro microsystems, inc. sanken and allegro reserve the right to make, from time to time, such de par tures from the detail spec i fi ca tions as may be re quired to per mit im- prove ments in the per for mance, reliability, or manufacturability of its prod ucts. therefore, the user is cau tioned to verify that the in for ma tion in this publication is current before placing any order. when using the products described herein, the ap pli ca bil i ty and suit abil i ty of such products for the intended purpose shall be reviewed at the users responsibility. although sanken undertakes to enhance the quality and reliability of its prod ucts, the occurrence of failure and defect of sem i con duc tor products at a certain rate is in ev i ta ble. users of sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to society due to device failure or malfunction. sanken products listed in this publication are designed and intended for use as components in general-purpose electronic equip ment or apparatus (home ap pli anc es, office equipment, tele com mu ni ca tion equipment, measuring equipment, etc.). their use in any application requiring radiation hardness assurance (e.g., aero space equipment) is not supported. when considering the use of sanken products in ap pli ca tions where higher reliability is re quired (transportation equipment and its control systems or equip ment, fire- or burglar-alarm systems, various safety devices, etc.), contact a company sales representative to discuss and obtain written con- firmation of your spec i fi ca tions. the use of sanken products without the written consent of sanken in applications where ex treme ly high reliability is required (aerospace equip- ment, nuclear power-control stations, life-support systems, etc.) is strictly prohibited. the information in clud ed herein is believed to be accurate and reliable. ap pli ca tion and operation examples described in this pub li ca tion are given for reference only and sanken and allegro assume no re spon si bil i ty for any in fringe ment of in dus tri al property rights, intellectual property rights, or any other rights of sanken or allegro or any third party that may result from its use. anti radioactive ray design is not considered for the products listed herein. the contents in this document must not be transcribed or copied without sankens written consent. copyright ? 2008-2010 allegro microsystems, inc. this datasheet is based on sanken datasheet sse-24045 allegro microsystems, inc. 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com downloaded from: http:///
reverse blocking triode thyristor tfa3x series 12 asia-pacificchina sanken electric hong kong co., ltd.suite 1026, ocean centre canton road, tsimshatsui kowloon, hong kong tel: 852-2735-5262, fax: 852-2735-5494 sanken electric (shanghai) co., ltd. room 3202, maxdo centre xingyi road 8, changning district shanghai, china tel: 86-21-5208-1177, fax: 86-21-5208-1757 sanken electric (shanghai) co., ltd. shenzhen office room 1013, xinhua insurance building mintian road, futian district shenzhen city, guangdong, china tel: 86-755-3391-9356/9358, fax: 86-755-3391-9368 taiwan sanken electric co., ltd. room 1801, 18th floor 88 jung shiau east road, sec. 2 taipei 100, taiwan r.o.c. tel: 886-2-2356-8161, fax: 886-2-2356-8261 japan sanken electric co., ltd.overseas sales headquarters metropolitan plaza building 1-11-1 nishi-ikebukuro, toshima-ku tokyo 171-0021, japan tel: 81-3-3986-6164, fax: 81-3-3986-8637 korea sanken electric korea co., ltd. samsung life yeouido building 16f 23-10, yeouido-dong, yeongdeungpo-gu seoul 150-734, korea tel: 82-2-714-3700, fax: 82-2-3272-2145 singapore sanken electric singapore pte. ltd. 150 beach road, #14-03 the gateway west singapore 189720 tel: 65-6291-4755, fax: 65-6297-1744 europe sanken power systems (uk) limited pencoed technology park pencoed, bridgend cf35 5hy, united kingdom tel: 44-1656-869-100, fax: 44-1656-869-162 north americaunited states allegro microsystems, inc. 115 northeast cutoff worcester, massachusetts 01606, u.s.a. tel: 1-508-853-5000, fax: 1-508-853-7895 allegro microsystems, inc. 14 hughes street, suite b105 irvine, california 92618, u.s.a. tel: 1-949-460-2003, fax: 1-949-460-7837 worldwide contacts allegro microsystems, inc. 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com downloaded from: http:///

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